Solid State Devices KTU SSD Notes EC S3 2019 scheme | ECT 201

The course “Solid State Devices - (ECT201)” is one of the core subjects in the third semester of B.tech Electronics And Communication Engineering at Kerala Technical University KTU. This course introduces students to the basic concepts of semiconductor physics and devices. The course covers topics such as crystal structure, band theory of solids, semiconductor physics, p-n junction, junction diodes, bipolar junction transistors, MOSFETs, etc. 

The course SSD ktu notes available here are in PDF format and are easy to understand. They are compiled by some of the best students in the class and will help you score good marks in the KTU exams.

The KTU S3 EC Solid State Devices - (ECT201)  Notes 2019 Scheme covers the entire 2019 Scheme syllabus for the B.tech S3 Second Year students of Electronics And Communication Engineering. The Notes are easy to understand and help the students score good marks on the KTU Exam. The Notes are available for PDF download.

KTU S3 EC Solid State Devices - (ECT201)  Notes 2019 Scheme is designed to help students secure a good score in their KTU Exam. The notes are in PDF format and can be downloaded for free. The notes are easy to understand and cover all the important topics in the syllabus.

Board KTU
Scheme 2019 New Scheme
Year Second Year
Semester S3
Subject ECT 201 |  Solid State Devices
Credit 4
Category KTU S3 Electronics & Communication Engineering

KTU S3  Solid State Devices | ECT 201 | Notes (2019 Scheme)

Solid State Devices KTU SSD Notes EC S3 2019 scheme | ECT 201

The PDF notes of KTU S3 EC Solid State Devices - (ECT201)  Notes 2019 Scheme is provided here for the Electronics And Communication Engineering students of the Second Year B.tech. The KTU B.tech students who are searching for the easy-to-understand pdf notes of the 2019 Scheme can easily find and download them here. 

The KTU pdf notes of the 2019 Scheme are very helpful for the students to score good marks in their KTU Exam. The pdf notes of the 2019 Scheme are provided here for free download.

ECT201 - Solid State Devices - (ECT201)  Notes 2019 Scheme easy to understand good score in KTU Exam. These notes are according to the 2019 scheme of KTU. B.Tech second-year Electronics And Communication Engineering students can download these notes for a good score in their KTU S3 Exam. These PDF notes are easy to download and can be shared with your friends too.

Module 1

Module 1 - Syllabus

Elemental and compound semiconductors, Intrinsic and Extrinsic semiconductors, the concept of effective mass, Fermions-Fermi Dirac distribution, Fermi level, Doping & Energy band diagram, Equilibrium and steady-state conditions, Density of states & Effective density of states, the Equilibrium concentration of electrons and holes.

Excess carriers in semiconductors: Generation and recombination mechanisms of excess carriers, quasi-Fermi levels.

Module 1 - Notes

Module 1  Solid State Devices | ECT 201 HANDWRITTEN Notes

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Module 2

Module 2 - Syllabus

Carrier transport in semiconductors, drift, conductivity and mobility, variation of mobility with temperature and doping, Hall Effect.

Diffusion, Einstein relations, Poisson equations, Continuity equations, Current flow equations, Diffusion length, Gradient of quasi-Fermi level

Module 2 - Notes

Module 2 Solid State Devices | ECT 201 HANDWRITTEN Notes

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Module 3

Module 3 - Syllabus

PN junctions: Contact potential, Electrical Field, Potential and Charge distribution at the junction, Biasing and Energy band diagrams, Ideal diode equation.

Metal Semiconductor contacts, Electron affinity and work function, Ohmic and Rectifying Contacts, current-voltage characteristics.

Bipolar junction transistor, current components, Transistor action, Base width modulation.

Module 3 - Notes

Module 3 Solid State Devices | ECT 201 HANDWRITTEN Notes

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Module 4

Module 4 - Syllabus

Ideal MOS capacitor, band diagrams at equilibrium, accumulation, depletion and inversion, the threshold voltage, body effect, MOSFET structure, types, Drain current equation (derive)- linear and saturation region, Drain characteristics, and transfer characteristics.

Module 4 - Notes

Module 4 Solid State Devices | ECT 201 HANDWRITTEN Notes

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Module 5

Module 5 - Syllabus

MOSFET scaling – the need for scaling, constant voltage scaling and constant field scaling.

Sub-threshold conduction in MOS. Short channel effects- Channel length modulation, Drain Induced Barrier Lowering, Velocity Saturation, Threshold Voltage Variations and Hot Carrier Effects. Non-Planar MOSFETs: Fin FET –Structure, operation and advantages

Module 5 - Notes

Module 5 Solid State Devices | ECT 201 HANDWRITTEN Notes

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